ksd882 ? npn epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ksd882 rev. b 1 november 2007 ksd882 npn epitaxial silicon transistor recommended applications ? audio frequency power amplifier featuers ? low speed switcing ? complement to ksb772 . absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** pw 10ms, duty cycle 50% electrical characteristics. t a =25 c unless otherwise noted * pulse test: pw 350 s, duty cycle 2% pulsed symbol parameter ratings units bv cbo collector-base voltage 40 v bv ceo collector-emitter voltage 30 v bv ebo emitter-base voltage 5 v i c collector current(dc) 3 a i c collector current(pulse)** 7 a i b base current 0.6 a p d total device dissipation(t c =25 c ) total device dissipation(t a =25 c ) 10 1 w w t j , t stg junction and storage temperature - 55 ~ +150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =500ua, i e =0 40 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 30 v bv ebo emitter-base breakdown voltage i e =500ua, i c =0 5 v i cbo collector cut-off current v cb = 30v, i e = 0 1 a i ebo emitter cut-off current v eb = 3v, i c = 0 1 a h fe1 h fe2 *dc current gain v ce = 2v, i c = 20ma v ce = 2v, i c = 1a 30 60 150 160 400 v ce (sat) *collector-emitter saturation voltage i c = 2a, i b = 0.2a 0.3 0.5 v v be (sat) *base-emitter saturation voltage i c = 2a, i b = 0.2a 1.0 2.0 v f t current gain bandwidth product v ce = 5v, i e = 0.1a 90 mhz c ob output capacitance v cb = 10v, i e = 0 f = 1mhz 45 pf 1 to-126 1. emitter 2.collector 3.base
ksd882 ? npn epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ksd882 rev. b 2 h fe classification ordering information * 1. affix ?-s-? means the standard to126 package. if the affix is ?-sts-? instead of ?-s-?, that means the short-lead to126 p ackage. 2. suffix ?-tu? means the tube packing, the suffix ?tu? could be replaced to other suffix character as packing method. classification r o y g h fe2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 part number marking package packing method remarks ksd882ostu d882o to-126 tube hfe1 r grade ksd882rstu d882r to-126 tube hfe1 o grade KSD882YSTU d882y to-126 tube hfe1 y grade ksd882gstu d882g to-126 tube hfe1 g grade
ksd882 ? npn epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ksd882 rev. b 3 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter saturation voltage figure 4. current gain bandwidth product figure 5. collector output capacitance figure 6. safe operating area 048121620 0.0 0.4 0.8 1.2 1.6 2.0 i b = 2ma i b = 1ma i b = 3ma i b = 4ma i b = 5ma i b = 6ma i b = 9ma i b = 8ma i b = 10ma i b = 7ma i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 10 10 100 1000 v ce = 2v h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 1 10 100 1000 v ce = 5v f t (mhz), current gain bandwidth product i c [a], collector current 110100 10 100 1000 i e =0 f=1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 0.01 0.1 1 10 s / b li mited d i s s i p a t i o n l i m i t e d 1 m s 10m s 100 s i c max. (pulse) i c max. (dc) i c [a], collector current v ce [v], collector-emitter voltage
ksd882 ? npn epitaxial silicon transistor ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ksd882 rev. b 4 typical characteristics figure 7. derating curve of safe operating areas figure 8. power derating 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 d i s s i p a t i o n l i m i t e d s / b l i m i t e d dt(%), i c derating t c [ o c], case temperature 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 p c [w], power dissipation t c [ o c], case temperature
trademarks the following are registered and unregistered trademarks and service marks fairchild semiconductor ow ns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further no tice to any products herein to improve reliability, funct ion, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specific ally the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications fo r product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specificat ions. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificatio ns on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i30 ? 2007 fairchild semiconductor corporation www.fairchildsemi.com ksd882 rev. b 5 ksd882 ? npn epitaxial silicon transistor
|
